GaAs Enhancement-Mode NMOSFETs Enabled by Atomic Layer Epitaxial La1.8Y0.2O3 as Dielectric
نویسندگان
چکیده
We demonstrate high performance enhancementmode (E-mode) GaAs NMOSFETs with an epitaxial gate dielectric layer of La1.8Y0.2O3 grown by atomic layer epitaxy (ALE) on GaAs(111)A substrates. A 0.5-μm-gate-length device has a record-high maximum drain current of 336 mA/mm for surface-channel E-mode GaAs NMOSFETs, a peak intrinsic transconductance of 210 mS/mm, a subthreshold swing of 97 mV/dec and an ION/IOFF ratio larger than 10. Thermal stability of the single crystalline La1.8Y0.2O3-single crystalline GaAs interface is investigated by capacitance-voltage (C-V) and conductance-voltage (G-V) analysis. High temperature annealing is found to be effective to reduce the Dit.
منابع مشابه
Heteroepitaxy of La2O3 and La(2-x)Y(x)O3 on GaAs (111)A by atomic layer deposition: achieving low interface trap density.
GaAs metal-oxide-semiconductor devices historically suffer from Fermi-level pinning, which is mainly due to the high trap density of states at the oxide/GaAs interface. In this work, we present a new way of passivating the interface trap states by growing an epitaxial layer of high-k dielectric oxide, La(2-x)Y(x)O(3), on GaAs(111)A. High-quality epitaxial La(2-x)Y(x)O(3) thin films are achieved...
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